bar 63 ... w oct-20-1999 1 silicon pin diode ? pin diode for high speed switching of rf signal ? low forward resistance ? very low capacitance ? for frequencies up to 3 ghz 1 3 vso05561 2 bar 63-04w bar 63-05w bar 63-06w eha07181 3 12 a1 c2 c1/a2 eha07179 3 12 a1 a2 c1/c2 eha07187 3 12 c1 c2 a1/a2 type marking pin configuration package bar 63-04w bar 63-05w bar 63-06w g4s g5s g6s 1 = a1 1 = a1 1 = c1 2 = c2 2 = a2 2 = c2 3=c1/a2 3 = c1/2 3 = a1/2 sot-323 sot-323 sot-323 maximum ratings unit parameter symbol value diode reverse voltage v r v 50 100 ma i f forward current total power dissipation , t s 105 c p tot mw 250 150 junction temperature t j c t op operating temperature range -55 ... 150 storage temperature t stg -55 ... 150 thermal resistance k/w r thja 340 junction - ambient 1) junction - soldering point r thjs 180 1) package mounted on alumina 15mm x 16.7mm x 0.7mm
bar 63 ... w oct-20-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. unit parameter values symbol min. max. typ. dc characteristics - 50 v (br) breakdown voltage i (br) = 5 a v - 50 reverse current v r = 20 v i r na - - 1.2 forward voltage i f = 100 ma - v f v 0.95 ac characteristics - 0.3 pf 0.3 0.21 c t - - diode capacitance v r = 0 v, f = 100 mhz v r = 5 v, f = 1 mhz 2 - ? 1.2 1 forward resistance i f = 5 ma, f = 100 mhz i f = 10 ma, f = 100 mhz - - r f - charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma rr ns 75 - - series inductance - l s nh 1.4
bar 63 ... w oct-20-1999 3 forward current i f = f ( t a *; t s ) * mounted on alumina 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 40 50 60 70 80 90 100 ma 120 i f t s 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 40 50 60 70 80 90 100 ma 120 i f t a 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 40 50 60 70 80 90 100 ma 120 i f permissible pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0
bar 63 ... w oct-20-1999 4 diode capacitance c t = f ( v r ) f = 1mhz v ehd07139 r t c 0 0v pf 0.1 0.2 0.3 0.4 0.5 10 20 30 forward resistance r f = f ( i f ) f = 100mhz ehd07138 f f r ? 10 -2 -1 10 ma 10 -1 10 0 10 1 10 2 10 2 10 0 10 1
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